求英汉翻译,电子专业内容.After powering this coil at 800VDC for extended periods of time, I experienced an IGBT failure (note that this was the first failure in over a year). The IGBT that failed also had its TVS string come disconnected (

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求英汉翻译,电子专业内容.After powering this coil at 800VDC for extended periods of time, I experienced an IGBT failure (note that this was the first failure in over a year).  The IGBT that failed also had its TVS string come disconnected (

求英汉翻译,电子专业内容.After powering this coil at 800VDC for extended periods of time, I experienced an IGBT failure (note that this was the first failure in over a year). The IGBT that failed also had its TVS string come disconnected (
求英汉翻译,电子专业内容.
After powering this coil at 800VDC for extended periods of time, I experienced an IGBT failure (note that this was the first failure in over a year). The IGBT that failed also had its TVS string come disconnected (though the TVS's were not damaged). So I began to investigate what was going on here, and found a significant oversight in my original design. The problem, as expected, had to do with voltage transients. I turns out that the inductance between my large electrolytic capacitors, and the bridge, along with the decoupling film caps located on the bridge, had a resonant frequency of around 40khz! My rail voltage was ringing up to 160% of the input voltage, so at 800VDC input, this would have presented 1280V across the 1200V IGBT devices... yikes! Here is a picture of the output from one of the half-bridges in this condition:
The only way to fix this condition is to minimize the inductance between the IGBTs and the main filter capacitors. Simply putting small film caps on the IGBTs *does not cut it*! So I came up with this solution:

求英汉翻译,电子专业内容.After powering this coil at 800VDC for extended periods of time, I experienced an IGBT failure (note that this was the first failure in over a year). The IGBT that failed also had its TVS string come disconnected (
After powering this coil at 800VDC for extended periods of time, I experienced an IGBT failure
对延长期内的线圈通800伏直流电后,我遭遇了一次绝缘栅双极型晶体管故障
(note that this was the first failure in over a year). The IGBT that failed also had its TVS string
(注意这是全年中的首次故障).那个失效的绝缘栅双极型晶体管也具有它自己的瞬态抑制二极
come disconnected (though the TVS's were not damaged). So I began to investigate what was
管串连接在一起(尽管瞬态抑制二极管未损坏).因此我开始调查这将会发生什么
going on here, and found a significant oversight in my original design. The problem, as
并且在我的最初设计中发现一个重大疏忽.如料想那样,
expected, had to do with voltage transients. I turns out that the inductance between my large
这个问题不得不遭遇瞬时电压.我去掉了大电容
electrolytic capacitors, and the bridge, along with the decoupling film caps located on the
与桥电路及其退耦遮膜之间的自感应,
bridge, had a resonant frequency of around 40khz! My rail voltage was ringing up to 160% of
产生了一个大约40千赫的共振频率!我的导轨电压采集到的电压为输入电压的160%,
the input voltage, so at 800VDC input, this would have presented 1280V across the 1200V
因此,在输入直流电压为800伏时,将会有1280伏电压出现1200伏的绝缘栅双极型晶体管
IGBT devices... yikes! Here is a picture of the output from one of the half-bridges in this condition:
上.呀!这是一张此状态下其中一个半桥电路中的输出图片:
The only way to fix this condition is to minimize the inductance between the IGBTs and the
修复此状态的唯一方法是减小绝缘栅双极型晶体管与主滤波器电容之间的自感应.
main filter capacitors. Simply putting small film caps on the IGBTs *does not cut it*! So I came up with this solution:
仅仅在绝缘栅双极型晶体管上覆盖小的遮膜不能解决!因此我想出了这个解决方案: